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Neutral Silicon-Vacancy Center in Diamond: Spin Polarization and Lifetimes
B L Green1, S Mottishaw1, B G Breeze1
1Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom.
Physical Review Letters
|September 27, 2017
Summary
We achieved optical spin polarization for the neutral silicon-vacancy defect in diamond (SiV0), a key step for quantum communication. This defect shows long spin coherence and relaxation times, making it promising for future technologies.
Area of Science:
- Quantum Optics
- Solid-State Physics
- Materials Science
Background:
- The neutral silicon-vacancy defect in diamond (SiV0) is an S=1 quantum spin defect.
- SiV0 emits light at 946 nm, falling within a desirable spectral range for quantum applications.
Purpose of the Study:
- To demonstrate and characterize optical spin polarization of the SiV0 defect.
- To assess the potential of SiV0 for quantum communication technologies.
Main Methods:
- Optical excitation at and below the 946 nm zero-phonon line of SiV0.
- Measurement of spin coherence time (T2) and spin relaxation time (T1).
- Demonstration of independent spin-state initialization of SiV0 and NV- centers.
Main Results:
- Efficient spin polarization of SiV0 achieved via resonant excitation, with non-zero polarization at below-resonant energies.
- Ensemble spin coherence time T2 > 100 μs at low temperatures.
- Spin relaxation time T1 > 25 s.
- SiV0 emission in the 1550 nm telecoms band with a high Debye-Waller factor.
Conclusions:
- Optical spin polarization of SiV0 is feasible and efficient.
- SiV0 exhibits excellent spin coherence and relaxation properties.
- SiV0 is a promising candidate for long-range quantum communication due to its emission properties and spin characteristics.
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