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Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography.

Cian Cummins1, Alan P Bell2, Michael A Morris3

  • 1AMBER Centre and CRANN, Trinity College Dublin, Dublin 2, Ireland. cian.a.cummins@gmail.com.

Nanomaterials (Basel, Switzerland)
|October 5, 2017
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel method for creating tungsten trioxide (WO₃) nanowires using block copolymer (BCP) self-assembly, offering a simpler alternative to traditional nanofabrication for nanoelectronic devices.

Keywords:
block copolymersdevice elementsdirected self-assemblylithographynanoelectronicstungsten trioxide

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrical Engineering

Background:

  • Silicon integrated circuit (IC) scaling faces challenges in performance augmentation, cost, and technical complexity.
  • Exploring alternative materials and processing schemes analogous to semiconductor manufacturing is crucial for advancing nanoelectronics.
  • Nontraditional lithography techniques, particularly block copolymer (BCP) feature patterning, offer promising avenues for novel device fabrication.

Purpose of the Study:

  • To demonstrate a new method for fabricating aligned tungsten trioxide (WO₃) nanowires using directed self-assembly (DSA) of BCPs.
  • To explore an alternative to conventional lithography and etching/deposition protocols for nanoelectronic device development.
  • To investigate the potential of BCP self-assembly for creating active device elements with controlled nanoscale chemistry.

Main Methods:

  • Utilized nanoimprint lithography (NIL) with silsesquioxane (SSQ)-based trenches to align a cylinder-forming poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) BCP soft template.
  • Fabricated WO₃ nanowires via a spin-on process.
  • Characterized the current-voltage (I-V) characteristics of Ti/Au (5 nm/45 nm) contacted WO₃ nanowires.

Main Results:

  • Successfully fabricated aligned WO₃ nanowires using DSA of BCPs, avoiding conventional lithography.
  • Demonstrated symmetric current-voltage characteristics for the resulting WO₃ nanowire devices.
  • Highlighted the simplicity and effectiveness of a solution-based approach for creating active nanoelectronic elements.

Conclusions:

  • The developed BCP self-assembly strategy provides an elegant and efficient route for WO₃ nanowire fabrication.
  • This approach simplifies nanoelectronic device development by controlling nanoscale chemistry with high sophistication.
  • The findings pave the way for next-generation nanoelectronic devices and suggest future research directions for performance enhancement.