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Updated: Feb 21, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Ignacio Piquero-Zulaica1, Jorge Lobo-Checa2,3, Ali Sadeghi4
1Centro de Física de Materiales CSIC/UPV-EHU-Materials Physics Center, Manuel Lardizabal 5, E-20018, San Sebastián, Spain.
Researchers engineered quantum dot intercoupling by precisely controlling barrier width in molecular networks. This tuning of potential barriers influences quantum properties for technological applications.
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