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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
698
P-N junction01:11

P-N junction

1.4K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.4K
Photoelectric Effect02:26

Photoelectric Effect

40.4K
When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
40.4K
MOSFET01:16

MOSFET

1.4K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.4K
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.2K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.2K

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Single-Molecule Photocurrent at a Metal-Molecule-Semiconductor Junction.

Andrea Vezzoli1, Richard J Brooke2, Simon J Higgins1

  • 1Department of Chemistry, University of Liverpool , Crown Street, Liverpool L69 7ZD, United Kingdom.

Nano Letters
|October 7, 2017
PubMed
Summary

We developed a novel metal-molecule-semiconductor nanodiode using gold and gallium arsenide. This device exhibits high rectification and photocurrent, offering new functionalities for single-molecule electronics.

Keywords:
STMgallium arsenidephotodiodesingle-molecule junctions

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Area of Science:

  • Nanotechnology
  • Molecular Electronics
  • Semiconductor Physics

Background:

  • Metal-molecule-semiconductor junctions are key components in nanoscale electronic devices.
  • Understanding charge transport at the single-molecule level is crucial for advancing molecular electronics.

Purpose of the Study:

  • To demonstrate a new metal-molecule-semiconductor nanodevice concept functioning as a photodiode.
  • To investigate the electrical and photocurrent behavior of such junctions at the single-molecule level.

Main Methods:

  • Fabrication of nanodevices using gold (Au) and gallium arsenide (GaAs) contacts.
  • Utilizing scanning tunneling microscopy (STM) to record current-voltage (I-V) traces.
  • Employing the "blinking" or "I(t)" method for single-molecule electrical characterization.
  • Testing junctions with both low and highly doped GaAs, and with different molecular bridges (pentanedithiol and 1,4-phenylene(dimethanethiol)).

Main Results:

  • Junctions with low-doped GaAs exhibited high dark rectification ratios (>10^3) and significant photocurrent under reverse bias.
  • Highly doped GaAs junctions showed poor rectification and low photocurrent.
  • The depletion layer thickness in low-doped GaAs influenced leakage current and photocurrent contribution.
  • The molecular bridge's highest occupied molecular orbital (HOMO) affected photogenerated hole tunneling and device response.

Conclusions:

  • Low-doped GaAs is superior for metal-molecule-semiconductor photodiodes due to enhanced rectification and photocurrent.
  • The molecular bridge plays a critical role in modulating the photodiode's performance.
  • Control of junction current via photogenerated carriers introduces novel functionalities for single-molecule nanodevices.