Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

872
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
872

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Dispersion compensation of four-channel high-speed IMDD data using slow-light in a silicon nitride chip.

Optics express·2026
Same author

Octave-spanning supercontinuum generation in a wafer-scale, low loss deuterated silicon nitride waveguide.

Optics express·2026
Same author

Thermo-optic control of a topological boundary mode.

Optics express·2026
Same author

Overcoming the sensitivity-speed trade-off in two-dimensional photodetectors via a functional oxide interlayer.

Nature communications·2026
Same author

Hybrid tungsten oxyselenide/graphene electrodes for near-lossless 2D semiconductor phase modulators.

Light, science & applications·2026
Same author

Wafer-scale CMOS foundry silicon-on-insulator devices for integrated temporal pulse compression.

Nanophotonics (Berlin, Germany)·2025

Related Experiment Video

Updated: Feb 21, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

16.5K

All-optical control on a graphene-on-silicon waveguide modulator.

Kelvin J A Ooi1, Peng Chuen Leong1, Lay Kee Ang1

  • 1SUTD-MIT International Design Center, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore.

Scientific Reports
|October 8, 2017
PubMed
Summary

Graphene integration enhances silicon photonics for compact all-optical devices. Graphene-on-silicon (GOS) waveguide modulators achieve high performance with short device lengths, advancing on-chip optical control.

More Related Videos

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

8.4K
Generation and Coherent Control of Pulsed Quantum Frequency Combs
06:42

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

9.8K

Related Experiment Videos

Last Updated: Feb 21, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

16.5K
Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

8.4K
Generation and Coherent Control of Pulsed Quantum Frequency Combs
06:42

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

9.8K

Area of Science:

  • Photonics and Optical Engineering
  • Materials Science
  • Nanotechnology

Background:

  • Silicon photonics offers low loss and CMOS compatibility but suffers from a low Kerr coefficient, limiting nonlinear optical device scaling.
  • Existing nonlinear silicon photonic devices face challenges in power and size due to material limitations.

Purpose of the Study:

  • To design and optimize all-optical graphene-on-silicon (GOS) waveguide modulators.
  • To leverage graphene's high nonlinear Kerr coefficient for improved all-optical device performance.
  • To enable compact, on-chip all-optical control solutions.

Main Methods:

  • Investigated the design of graphene-on-silicon waveguide structures.
  • Simulated and optimized device parameters for all-optical modulation.
  • Focused on achieving high performance with low optical pump intensities and short device lengths.

Main Results:

  • Achieved optimized performance with optical pump intensities in the MW cm-2 range.
  • Demonstrated the feasibility of sub-millimeter device lengths for GOS modulators.
  • Showcased significant improvements in nonlinear optical performance compared to silicon-only devices.

Conclusions:

  • Integration of graphene onto silicon photonic waveguides significantly enhances nonlinear optical properties.
  • GOS waveguide modulators represent a promising pathway towards compact, high-performance all-optical integrated circuits.
  • This advancement brings compact all-optical control on a single chip closer to realization.