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Related Experiment Videos

A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer.

Vahid Mohammadi1, Stoyan Nihtianov2, Changming Fang3

  • 1Department of Microelectronics, Delft University of Technology, 2628 CD, Delft, The Netherlands. V.Mohammadi@tudelft.nl.

Scientific Reports
|October 18, 2017
PubMed
Summary

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Researchers created a novel, ultra-shallow silicon junction using an atomically thin boron layer. This breakthrough offers excellent electrical and optical properties, differing from existing rectifying junctions.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Physics

Background:

  • Growing interest in silicon nanostructures and dopants.
  • Need for advanced junction formation techniques in silicon.

Purpose of the Study:

  • To create an ultimately-shallow junction on n-type silicon.
  • To investigate the junction's electrical and optical characteristics.
  • To understand the mechanism behind the novel junction formation.

Main Methods:

  • Deposition of an atomically thin boron layer on n-type silicon at low temperatures.
  • Experimental characterization of electrical and optical properties.
  • Ab initio quantum mechanics molecular dynamics simulations.

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Main Results:

  • Successful creation of an ultra-shallow junction with excellent electrical and optical properties.
  • Demonstration that the junction structure differs from known rectifying junctions.
  • Identification of chemical interaction between silicon and boron as the dominant factor in junction formation.
  • Observation of a strong electric field at the c-Si/a-B interface due to charge transfer.

Conclusions:

  • The novel junction is formed by the chemical interaction at the crystalline silicon/amorphous boron interface.
  • A surface-originating depletion zone in silicon leads to rectifying behavior.
  • This work presents a new paradigm for forming shallow junctions in silicon.