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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer.
A Cabrero-Vilatela1, J A Alexander-Webber, A A Sagade
1Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom.
Nanotechnology
|October 18, 2017
Summary
This study introduces atomic layer deposited (ALD) oxide films for graphene transfer, eliminating polymer contamination and enabling cleaner interfaces for advanced electronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Graphene transfer is crucial for applications but hindered by polymer contamination.
- Existing methods using sacrificial polymers leave residues, impacting device performance.
Purpose of the Study:
- To develop a polymer-free graphene transfer method using atomic layer deposited (ALD) oxide films.
- To investigate ALD films as protective and functional layers during graphene transfer.
Main Methods:
- Utilizing atomic layer deposited (ALD) oxide films (e.g., Al2O3) as support and interface layers.
- Transferring single-layer graphene onto SiO2 substrates with ALD films, avoiding polymer contact.
- Fabricating back-gated field effect devices with graphene/ALD bilayer structures.
Main Results:
- Successfully transferred graphene without polymer contamination.
- ALD films served as effective protective and functional layers.
- Demonstrated reduced charge trap and residual carrier densities in graphene devices.
Conclusions:
- ALD oxide films offer a viable polymer-free solution for graphene transfer.
- This method enhances graphene device quality and facilitates integrated manufacturing.
- Graphene/ALD bilayer structures present a promising platform for future electronic applications.
