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Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction
Optics Express
|October 19, 2017
Summary
We developed a new silicon/germanium/silicon photodiode for silicon photonics. This device offers high performance and reduced fabrication complexity for optical interconnects.
Area of Science:
- Photonics
- Materials Science
- Electrical Engineering
Background:
- Germanium photodetectors are mature silicon photonics components.
- They are essential for sensing, communications, and optical interconnects.
Purpose of the Study:
- To design, fabricate, and demonstrate an integrated waveguide PIN photodiode.
- To leverage lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions for improved performance and compatibility.
Main Methods:
- Design and fabrication of a Si/Ge/Si heterojunction PIN photodiode.
- Experimental demonstration of the photodiode's optical and electrical characteristics near 1.55 μm.
Main Results:
- Achieved dark current < 10 nA at -1V reverse voltage.
- Obtained responsivity > 1.1 A/W.
- Demonstrated a 3 dB opto-electrical cut-off frequency over 50 GHz.
Conclusions:
- The Si/Ge/Si photodiode offers high-performance operation and reduced fabrication complexity.
- This architecture is suitable for cost-effective photonic transceivers on silicon-on-insulator substrates.
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