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Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
Xiao-Xi Li1,2, Zhi-Qiang Fan3, Pei-Zhi Liu4
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
Nature Communications
|October 19, 2017
Summary
Researchers developed a new fabrication method for 2D semiconducting materials, enabling advanced nanoelectronics. This technique suppresses barriers in molybdenum disulfide (MoS2) transistors, paving the way for future logic devices.
Area of Science:
- Materials Science
- Nanoscience
- Condensed Matter Physics
Background:
- Atomically thin two-dimensional (2D) semiconducting materials in van der Waals heterostructures are crucial for next-generation nanoelectronics.
- Integration challenges, such as Schottky barriers and Fermi level pinning, hinder their application in logic devices.
Purpose of the Study:
- To devise a fabrication technique for overcoming integration challenges in 2D material-based nanoelectronic devices.
- To enable homogeneous gate control and reversible diode behavior in molybdenum disulfide (MoS2) transistors.
Main Methods:
- A reverted stacking technique was employed to introduce a boron nitride (BN) tunnel layer between the MoS2 channel and electrodes.
- Vertical electron tunneling was utilized to suppress Schottky barriers and Fermi level pinning.
Main Results:
- The developed method resulted in homogeneous gate control of the MoS2 channel's chemical potential.
- Ambipolar pn to np diode behavior was observed and could be reversibly tuned by the gate.
Conclusions:
- The fabrication technique enables the suppression of Schottky barriers and Fermi level pinning in 2D material heterostructures.
- The demonstrated gate-tunable, reversible diode behavior is promising for future logic applications and high-performance switches.