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Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices
Dilip K Maiti1, Sudipto Debnath2, Sk Masum Nawaz3
1Department of Chemistry, University of Calcutta, 92 A. P. C. Road, Kolkata, 700009, India. dkmchem@caluniv.ac.in.
Scientific Reports
|October 19, 2017
Summary
Researchers developed a metal-free synthesis for organic nanomaterials. These materials enable novel nonvolatile memory devices with distinct write-once and read-many or resistive-switching random access memory functionalities.
Area of Science:
- Materials Science
- Organic Chemistry
- Nanotechnology
Background:
- Organic nanomaterials offer tunable electronic properties.
- Developing efficient synthesis routes for functional organic materials is crucial for advanced applications.
- Nonvolatile memory devices require stable and switchable materials.
Purpose of the Study:
- To devise a metal-free synthetic strategy for amido-phenazine derivatives.
- To fabricate and characterize organic nanomaterials for electronic devices.
- To investigate the memory switching properties of mixed phenazine-stearic acid nanomaterials.
Main Methods:
- A three-component cyclization reaction with amidation was employed for synthesis.
- Density Functional Theory (DFT) was used for molecular design.
- Mixed phenazine-stearic acid nanomaterials were fabricated.
- Electrical characteristics of fabricated devices were measured.
Main Results:
- A novel amido-phenazine derivative was synthesized using a metal-free approach.
- Two distinct types of resistive switching behaviors were observed in mixed nanomaterials.
- Sample-1 (1:3 phenazine:stearic acid) exhibited write-once behavior.
- Sample-2 (3:1 phenazine:stearic acid) demonstrated bipolar resistive switching.
Conclusions:
- The developed synthetic method enables the fabrication of functional organic nanomaterials.
- The composition-tuned nanomaterials exhibit distinct nonvolatile memory functionalities.
- These materials are promising for applications in write-once-read-many and resistive-switching random access memory devices.
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