Related Experiment Video
Updated: Feb 20, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films
Dustin A Gilbert1,2, Juan Gabriel Ramírez3, T Saerbeck4
1Physics Department, University of California, Davis, California, 95616, United States. dustin.gilbert@nist.gov.
Abstract:
We report on a strain-induced and temperature dependent uniaxial anisotropy in V2O3/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V2O3; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V2O3/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. The resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.
More Related Videos
Related Concept Videos
Normal Strain under Axial Loading
Eccentric Axial Loading in a Plane of Symmetry
Yield Criteria for Ductile Materials under Plane Stress
The Maximum Shearing Stress Criterion, also known as...

