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Updated: Feb 20, 2026
09:51
Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
13.3K
Optically induced metastability in Cu(In,Ga)Se2
S A Jensen1, A Kanevce1, L M Mansfield1
1National Renewable Energy Laboratory, 15013 Denver West Pkwy., Golden, Colorado, 80401, USA.
Scientific Reports
|October 25, 2017
Summary
This study investigates metastability in Copper Indium Gallium Selenide (CIGS) solar cells, identifying a sub-bandgap optical transition that degrades carrier lifetime. Findings support an expanded divacancy model, aiding future photovoltaic technology assessments.
Area of Science:
- Materials Science
- Solid State Physics
- Renewable Energy
Background:
- Copper Indium Gallium Selenide (CIGS) is a leading thin-film photovoltaic technology with over 22% efficiency.
- Metastability, a light-induced material change over weeks, impacts CIGS solar cell performance.
- A (VSe -VCu) divacancy model is the current explanation for CIGS metastability.
Purpose of the Study:
- To provide experimental evidence for optically induced metastability in CIGS.
- To expand the existing divacancy model using first-principles calculations.
- To assess the impact of metastability on CIGS device performance.
Main Methods:
- Photoluminescence excitation spectroscopy to identify optical transitions.
- First-principles calculations to expand the divacancy model.
- Determination of density-capture cross-section product for induced states.
Main Results:
- Experimental confirmation of optically induced metastability transition.
- Identification of a sub-bandgap optical transition that reduces carrier lifetime.
- Validation of the expanded divacancy model, linking sub-conduction band states to metastability.
Conclusions:
- The study validates and expands the divacancy model for CIGS metastability.
- Identified states significantly degrade carrier lifetime and device performance.
- Provides a framework for assessing metastability in thin-film photovoltaic technologies.
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