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Graphene enhanced field emission from InP nanocrystals
L Iemmo1, A Di Bartolomeo1,2, F Giubileo2
1Physics Department 'E. R. Caianiello', University of Salerno, via Giovanni Paolo II, I-84084, Fisciano, Italy.
Nanotechnology
|October 31, 2017
Summary
Field emission from Indium Phosphide (InP) nanocrystals on silicon nanotips is enhanced by graphene. This study analyzes the field emission properties and junction behaviors for nanoelectronic applications.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Field emission (FE) is crucial for vacuum microelectronics and displays.
- Indium Phosphide (InP) nanocrystals (NCs) offer unique electronic properties.
- Silicon nanotips provide a suitable substrate for nanoscale device fabrication.
Purpose of the Study:
- To investigate field emission from InP nanocrystals epitaxially grown on p-Si nanotips.
- To determine the effect of graphene coating on the field emission properties of InP NCs.
- To analyze the electrical characteristics of the InP/p-Si junction and graphene/InP interface.
Main Methods:
- Epitaxial growth of InP nanocrystals on p-Si nanotip arrays.
- Field emission measurements within a scanning electron microscope using a nano-controlled anode.
- Analysis of field emission data using Fowler-Nordheim theory.
- Electrical characterization of InP/p-Si and graphene/InP junctions.
Main Results:
- Observed field emission from InP NCs on p-Si nanotips.
- Demonstrated enhancement of field emission upon covering InP NCs with graphene.
- Field enhancement factor increases with anode-cathode spacing.
- InP/p-Si junction exhibits rectifying behavior; graphene/InP contact shows ohmic behavior.
Conclusions:
- Graphene coating significantly enhances field emission from InP/p-Si nanostructures.
- Understanding the junction physics is essential for developing novel nanoelectronic devices.
- The demonstrated system holds promise for applications in nanoelectronics and field emission devices.
