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InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant.

W Y Ji, Y Gu, Y G Zhang

    Applied Optics
    |November 2, 2017
    PubMed
    Summary

    Adding bismuth (Bi) surfactant to indium phosphide (InP)-based quantum well lasers significantly improves performance. This enhancement includes higher output power and efficiency, with reduced internal loss for better laser diodes.

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    Area of Science:

    • Materials Science
    • Semiconductor Physics
    • Optoelectronics

    Background:

    • Indium phosphide (InP)-based semiconductor lasers are crucial for optical communications.
    • Strained quantum well structures are employed to tailor laser performance.
    • Growth techniques impact the quality and efficiency of laser diodes.

    Purpose of the Study:

    • To investigate the effect of bismuth (Bi) surfactant on InP-based 2.1 μm InAs/In0.53Ga0.47As triangular quantum well lasers.
    • To quantify the performance improvements in lasers grown with and without Bi surfactant.
    • To assess the potential of Bi surfactant for enhancing strained quantum well laser diodes.

    Main Methods:

    • Fabrication of InP-based 2.1 μm InAs/In0.53Ga0.47As triangular quantum well lasers using metalorganic chemical vapor deposition (MOCVD).

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  • Growth of a reference laser device without Bi surfactant.
  • Growth of an identical laser device incorporating a Bi surfactant during the growth process.
  • Characterization of laser performance under continuous-wave (CW) driving operation at 200 K, including output power, external differential efficiency, internal quantum efficiency, and internal loss.

    • Main Results:

    • The laser grown with Bi surfactant exhibited a higher output power (37.5 mW) compared to the reference device (32.6 mW) at 850 mA injection current and 200 K.
    • External differential quantum efficiency increased from 13.1% to 18.4%, and internal quantum efficiency rose from 31% to 41% with Bi surfactant.
    • Internal optical loss decreased from 20.9 cm⁻¹ to 17.6 cm⁻¹ in the Bi surfactant-enhanced laser.

    Conclusions:

    • Bismuth surfactant incorporation during the growth of InP-based InAs/In0.53Ga0.47As quantum well lasers leads to significant performance improvements.
    • The observed enhancements in output power, efficiencies, and reduced internal loss highlight the beneficial role of Bi surfactant.
    • Bi surfactant is a promising strategy for advancing the performance of strained quantum well laser diodes.