Material interface detection based on secondary electron images for focused ion beam machining.
Hang-Eun Joe1, Won-Sup Lee1, Martin B G Jun2
1Department of Mechanical Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
Ultramicroscopy
|November 3, 2017
Summary
This study introduces a novel interface detection method for focused ion beam (FIB) machining of multilayered materials. The technique uses secondary electron images to precisely control FIB processes for nanodevice fabrication.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Science
Background:
- Multilayered structures are crucial for advanced nanodevices.
- Machining multilayers with focused ion beam (FIB) presents significant challenges.
- Precise control is needed for fabricating nanostructures on these materials.
Purpose of the Study:
- To develop an effective interface detection method for FIB processes on multilayered targets.
- To enable precise fabrication of nanostructures without prior thickness information.
- To demonstrate the applicability of the method on complex and curved surfaces.
Main Methods:
- Monitoring secondary electron (SE) images during FIB machining.
- Analyzing SE image gray-level average and skewness coefficient for endpoint detection.
- Implementing real-time FIB process control based on image analysis.
Main Results:
- Successfully fabricated nanostructures on multilayered targets without needing thickness data.
- Demonstrated precise groove and aperture fabrication using the developed FIB process control.
- Validated the method's effectiveness on curved surfaces and complex substrates.
Conclusions:
- The proposed SE image-based interface detection offers precise control for FIB processes.
- This method facilitates the fabrication of nanodevices on challenging multilayered and complex substrates.
- The strategy is adaptable for curved or flexible targets, expanding FIB applications.
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