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Application of the pattern matching approach for EBSD calibration and orientation mapping, utilising dynamical EBSP
T Friedrich1, A Bochmann1, J Dinger1
1Department of SciTec, University of Applied Sciences, Carl-Zeiss-Promenade 2, D-07745 Jena, Germany.
Ultramicroscopy
|November 3, 2017
Summary
This study introduces a novel cross-correlation method for electron backscatter diffraction (EBSD) pattern analysis, significantly improving angular resolution and orientation precision in materials like silicon. The new technique enhances data accuracy for mapping crystal orientations and detecting lattice distortions.
Area of Science:
- Materials Science
- Crystallography
- Electron Microscopy
Background:
- Electron Backscatter Diffraction (EBSD) is crucial for materials characterization.
- Accurate calibration and orientation mapping are essential for high-resolution EBSD analysis.
- Existing Hough transform methods have limitations in angular resolution.
Purpose of the Study:
- To present and evaluate an alternative off-line Kikuchi pattern center calibration and orientation mapping method.
- To demonstrate enhanced angular resolution compared to traditional Hough transform techniques.
- To improve orientation precision and reduce noise in EBSD datasets.
Main Methods:
- Utilized cross-correlation between experimental and dynamical simulated Kikuchi patterns.
- Analyzed EBSD datasets of silicon monocrystals using both classical and cross-correlation methods.
- Employed multiple linear regression to correlate pattern center positions and detector distances with map coordinates.
Main Results:
- Achieved significant enhancement in angular resolution with the cross-correlation method.
- Reduced mean misorientation by up to an order of magnitude, reaching an angular resolution of 0.06°.
- Successfully reduced orientation noise in highly deformed silicon crystals and utilized cross-correlation coefficient for quality mapping.
Conclusions:
- The cross-correlation method offers superior angular resolution and orientation precision over Hough transform methods.
- This technique provides a more accurate way to map crystal orientations and analyze lattice distortions.
- The cross-correlation coefficient serves as a valuable indicator of pattern quality and material surface characteristics.
