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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces.

Hareesh Chandrasekar1,2,3, K N Bhat4, Muralidharan Rangarajan4

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The parasitic conduction channel in Gallium Nitride-on-Silicon (GaN-on-Silicon) devices is linked to silicon surface acceptors, primarily Si-O-N complexes. This finding helps improve GaN-on-Silicon device performance.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Device Engineering

Background:

  • Gallium Nitride-on-Silicon (GaN-on-Silicon) electronic devices suffer performance degradation due to parasitic conduction pathways at the nitride-substrate interface.
  • These parasitic channels cause increased switching losses and reduced breakdown voltages, hindering device efficiency.

Purpose of the Study:

  • To investigate the physical nature and properties of the parasitic conduction channel at Aluminum Nitride/Silicon (AlN/Si) interfaces.
  • To understand the thickness dependence of parasitic channel formation and its underlying mechanisms.

Main Methods:

  • Secondary Ion Mass Spectroscopy (SIMS) was employed to analyze the origin of surface acceptor densities at the AlN/Si interface.
  • Low-temperature (5 Kelvin) magneto-resistance (MR) measurements were conducted to probe the electronic properties of the interface.

Main Results:

  • A strong thickness dependence of parasitic channel formation was observed, linked to increased surface acceptor densities in silicon.
  • SIMS analysis identified Si-O-N complexes as the source of thermal acceptor formation.
  • Magneto-resistance data indicated the presence of an electron inversion layer, contributing to parasitic conduction, though secondary at room temperature.

Conclusions:

  • The study elucidates the critical role of silicon surface acceptors, specifically Si-O-N complexes, in forming parasitic channels at AlN/Si interfaces.
  • Understanding these mechanisms is crucial for mitigating performance issues in GaN-on-Silicon electronic devices and optimizing their design.