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Stanene based gas sensors: effect of spin-orbit coupling
Priyanka Garg1, Indrani Choudhuri, Biswarup Pathak
1Discipline of Chemistry, Indian Institute of Technology (IIT) Indore, Indore, M.P. 453552, India.
Doping stanene with boron and nitrogen enhances its gas sensing capabilities for molecules like NO, NO2, NH3, and N2O. These modified stanene materials show improved selectivity and sensitivity, making them promising for semiconductor gas sensors.
Area of Science:
- Materials Science
- Nanotechnology
- Computational Chemistry
Background:
- Stanene, a 2D material, is being explored for gas sensing applications.
- Doping can significantly alter the electronic and chemical properties of 2D materials.
- Understanding interactions between gas molecules and stanene is crucial for sensor development.
Purpose of the Study:
- To investigate the gas sensing properties of pure and doped stanene (B@, N@, B-N@) for NO, NO2, NH3, and N2O.
- To analyze the electronic properties and interaction mechanisms using computational methods.
- To evaluate the potential of doped stanene for advanced semiconductor gas sensors and spintronic applications.
Main Methods:
- Density Functional Theory (DFT) calculations with dispersion correction (DFT-D3).
- Analysis of charge density difference (CDD), electrostatic potential (ESP), and Bader charge.
- Investigation of electronic properties with and without spin-orbit coupling (SOC).
Main Results:
- Doping stanene with B@, N@, and B-N@ significantly improves interactions with gas molecules.
- Pure and doped stanene systems exhibit Rashba-type spin-splitting under SOC, indicating spintronic potential.
- Doped stanene demonstrates higher selectivity and sensitivity towards target gas molecules compared to pure stanene.
Conclusions:
- B@, N@, and B-N@ doped stanene exhibit enhanced gas sensing performance.
- The observed spin-splitting opens avenues for spintronic device applications.
- Doped stanene materials are promising candidates for next-generation semiconductor-based gas sensors.
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