Straightforward Integration Flow of a Silicon-Containing Block Copolymer for Line-Space Patterning

Area of Science:

• Materials Science
• Nanotechnology
• Semiconductor Manufacturing

Background:

• Directed self-assembly of block copolymers (BCPs) is a key bottom-up technique for creating nanometric features.
• Next-generation lithography requires advanced methods for high-resolution patterning.
• Silicon-based BCPs offer potential for integration into semiconductor fabrication processes.

Purpose of the Study:

• To report a straightforward integration flow for line-space patterning using a silicon BCP system.
• To demonstrate the capability of poly(1,1-dimethylsilacyclobutane)-b-poly(styrene) (PDMSB-b-PS) for sub-15 nm feature definition.
• To showcase the use of PDMSB-b-PS in a complete lithography process, including pattern transfer.

Main Methods:

• Utilized graphoepitaxy for long-range ordering of PDMSB-b-PS.
• Employed rapid thermal annealing (10 min at 180 °C) for BCP structure formation.
• Demonstrated deep pattern transfer into a silicon substrate using oxidized PDMSB domains as an etch mask.

Main Results:

• Achieved sub-15 nm feature definition using PDMSB-b-PS.
• Successfully formed both in-plane cylindrical (L0 = 20.7 nm) and out-of-plane lamellar (L0 = 23.2 nm) structures.
• Integrated BCP self-assembly and pattern transfer without underlayers or top coats.

Conclusions:

• PDMSB-b-PS exhibits rapid self-assembly behavior and straightforward integration for nanolithography.
• The material demonstrates excellent etching contrast, facilitating pattern transfer.
• PDMSB-b-PS is a promising candidate material for next-generation lithography applications.