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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Fabrication of carbon quantum dots with nano-defined position and pattern in one step via sugar-electron-beam writing
Yuyan Weng1, Zhiyun Li, Lun Peng
1Center for Soft Condensed Matter Physics and Interdisciplinary Research, Soochow University, Suzhou, 215006, China. gchen@suda.edu.cn.
Abstract:
Quantum dots (QDs) are promising materials in nanophotonics, biological imaging, and even quantum computing. Precise positioning and patterning of QDs is a prerequisite for realizing their actual applications. Contrary to the traditional two discrete steps of fabricating and positioning QDs, herein, a novel sugar-electron-beam writing (SEW) method is reported for producing QDs via electron-beam lithography (EBL) that uses a carefully chosen synthetic resist, poly(2-(methacrylamido)glucopyranose) (PMAG). Carbon QDs (CQDs) could be fabricated in situ through electron beam exposure, and the nanoscale position and luminescence intensity of the produced CQDs could be precisely controlled without the assistance of any other fluorescent matter. We have demonstrated that upon combining an electron beam with a glycopolymer, in situ production of CQDs occurs at the electron beam spot center with nanoscale precision at any place and with any patterns, an advancement that we believe will stimulate innovations in future applications.

