Semiconductor sharpeners providing a subnanosecond voltage rise time of GW-range pulses

The article describes semiconductor sharpeners providing a subnanosecond voltage rise time of GW-range pulses. The sharpeners are made as stacks of series-connected dynistor structures built into an oil-filled coaxial line with 48 Ω wave impedance at the place of an inner conductor. Two sequential sections of pulse sharpening are used. An input voltage pulse has the amplitude of 540 kV with the rise time of ∼1.2 ns at 0.2-0.9 level from the amplitude and voltage rise rate of ∼0.3 MV/ns. After pulse propagation through the sharpening sections, its rise time is reduced down to 360 ps, and the voltage rise rate is increased up to ∼0.95 MV/ns. Peak power of the sharpened pulse is within the range of 4.5-5.5 GW. The sharpeners are tested at a pulse repetition frequency of up to 1 kHz. Sharpener operation is studied by numerical simulation methods. Experimental waveforms of output pulses and the corresponding calculated voltage-time dependences are in statistical agreement.