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Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes

Tim Kolbe1,2, Arne Knauer3, Jens Rass4,5

  • 1Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany. Tim.Kolbe@FBH-Berlin.de.

Materials (Basel, Switzerland)
|December 7, 2017
PubMed

Keywords:
EBLLEDMOVPEUVdopingelectron blocking layerheterostructurelight emitting diodesimulationultraviolet

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