Metal oxide multilayer hard mask system for 3D nanofabrication
Zhongmei Han1, Emma Salmi2, Marko Vehkamäki1
1Department of Chemistry, University of Helsinki, FI-00014 Helsinki, Finland.
Nanotechnology
|December 8, 2017
Summary
Multilayer metal oxide hard masks fabricated using atomic layer deposition (ALD) and focused ion beam (FIB) enable advanced 2D and 3D nanofabrication. This technique overcomes FIB defects for precise micro- and nano-fabrication.
Area of Science:
- Materials Science
- Nanotechnology
- Lithography
Background:
- Focused ion beam (FIB) milling often introduces defects in microfabrication.
- Developing precise patterning methods is crucial for advanced nanofabrication.
Purpose of the Study:
- To demonstrate multilayer metal oxide hard masks for lithography and 3D nanofabrication.
- To combine Atomic Layer Deposition (ALD) and FIB for improved mask patterning.
- To overcome common FIB-induced defects in microfabrication.
Main Methods:
- Fabrication of Al2O3/Ta2O5/Al2O3 thin film stacks using ALD.
- Patterning of the multilayer stacks using FIB milling with gallium ions.
- Chemical etching using tetramethylammonium hydroxide.
- 2D lift-off processing for metal line fabrication.
- Fabrication of 3D structures using self-supporting masks.
Main Results:
- Successful patterning of multilayer metal oxide masks, avoiding FIB defects.
- Tailored masks for 2D lift-off processing, enabling sub-100 nm metal lines and multilevel contacts.
- Demonstration of self-supporting 3D masks for 3D nanofabrication.
- Fabrication of thin film resistors using controlled stiction of suspended structures.
Conclusions:
- The combined ALD and FIB approach provides a robust method for creating high-resolution hard masks.
- This technique is versatile for both 2D and 3D nanofabrication applications.
- The developed masks facilitate advanced microelectronic and nanodevice fabrication.


