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Ultrafast Generation of Unconventional {001} Loops in Si
Luis A Marqués1, María Aboy1, Iván Santos1
1Departamento de Electricidad y Electrónica, Universidad de Valladolid, Escuela Técnica Superior de Ingenieros de Telecomunicación, 47011 Valladolid, Spain.
Abstract:
Ultrafast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquidlike droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond time scale.
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