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Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM

Facai Wu1,2,3, Shuyao Si1, Tuo Shi2,3

  • 1Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, Wuhan University, Wuhan 430072, People's Republic of China.

Nanotechnology
|December 9, 2017
PubMed

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