Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements.

Physical review letters·2018

Same author

Street crossing behavior in younger and older pedestrians: an eye- and head-tracking study.

BMC geriatrics·2015

Same author

Reaching the quantum limit of sensitivity in electron spin resonance.

Nature nanotechnology·2015

Same author

Broadband photocurrent enhancement and light-trapping in thin film Si solar cells with periodic Al nanoparticle arrays on the front.

Optics express·2015

Same author

Diffractive coupling and plasmon-enhanced photocurrent generation in silicon.

Optics express·2013

Same author

Self-assembled Al nanoparticles on Si and fused silica, and their application for Si solar cells.

Nanotechnology·2013

Search research articles

Related Experiment Video

Updated: Feb 17, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

Embedded tin nanocrystals in silicon-an electrical characterization.

L Scheffler¹, M J Haastrup², S Roesgaard²

¹Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C, Denmark.

|December 9, 2017

Summary

This summary is machine-generated.

Tin nanocrystals in silicon were studied using deep level transient spectroscopy. Two tin-related deep traps (Sn1 and Sn2) were identified, dependent on annealing temperature, indicating defect transformation during nanocrystal formation.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Related Experiment Videos

Last Updated: Feb 17, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Area of Science:

Materials Science
Semiconductor Physics
Nanotechnology

Background:

Tin nanocrystals embedded in silicon-germanium (SiSn) layers are of interest for semiconductor applications.
Understanding defect behavior in these nanostructures is crucial for device performance.

Purpose of the Study:

To investigate tin-related deep traps in SiSn layers with embedded tin nanocrystals.
To correlate the presence of these traps with annealing temperature and nanocrystal formation.

Main Methods:

Deep Level Transient Spectroscopy (DLTS) was employed to identify and characterize electrical traps.
Scanning Transmission Electron Microscopy (STEM) was used to confirm the formation of tin nanocrystals.

Main Results:

Two distinct tin-related deep traps, labeled Sn1 and Sn2, were observed.
Sn1 was present at lower annealing temperatures (up to 700°C), while Sn2 appeared at higher temperatures (above 700°C).
Tin nanocrystal formation, confirmed by STEM at 700°C, coincided with the emergence of the Sn2 trap.

Conclusions:

The Sn1 trap is likely a tin-related precursor defect.
Upon annealing above 700°C, this precursor defect transforms into either tin nanocrystals or an interface defect associated with the nanocrystal surface, leading to the Sn2 trap.