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Related Experiment Video

Updated: Feb 8, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

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Published on: January 9, 2014

Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements.

J Kirschbaum¹, T Teuber¹, A Donner¹

¹Institute of Materials Physics, Westfälische Wilhelms-Universität Münster, 48149 Münster, Germany.

Physical Review Letters

|June 16, 2018

Summary

This summary is machine-generated.

Self-diffusion in amorphous silicon (Si) was studied. Results show self-diffusion occurs via local bond rearrangements, not extended defects, before recrystallization.

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Experimental Methodology for Estimation of Local Heat Fluxes and Burning Rates in Steady Laminar Boundary Layer Diffusion Flames

Experimental Methodology for Estimation of Local Heat Fluxes and Burning Rates in Steady Laminar Boundary Layer Diffusion Flames

Published on: June 1, 2016

Area of Science:

Materials Science
Solid-State Physics
Semiconductor Research

Background:

Amorphous silicon (a-Si) is a crucial material in semiconductor technology.
Understanding diffusion mechanisms in a-Si is vital for device fabrication and reliability.
Previous studies suggested extended defects mediate self-diffusion in a-Si.

Purpose of the Study:

To investigate self-diffusion in amorphous silicon (a-Si) at elevated temperatures.
To determine the mechanism governing self-diffusion in a-Si.
To compare the activation enthalpy of self-diffusion with other related processes.

Main Methods:

Preparation of amorphous silicon using Si ion implantation of isotope multilayers.
Annealing experiments at temperatures ranging from 460 to 600°C.
Analysis of Si isotope profiles using secondary ion mass spectrometry (SIMS).

Main Results:

Structural relaxation did not cause significant intermixing.
Significant self-diffusion was observed before recrystallization.
The temperature dependence of self-diffusion followed an Arrhenius law with Q=(2.70±0.11) eV.

Conclusions:

Self-diffusion in amorphous silicon is primarily mediated by local bond rearrangements.
The activation enthalpy for self-diffusion matches that of hydrogen diffusion and bond defect migration.
Findings challenge previous hypotheses attributing self-diffusion to extended defect migration.