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Updated: Feb 17, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with
Hiroshi Sekine1, Masahiro Kobayashi2, Yusuke Onuki3
1Canon Inc., 70-1, Yanagi-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8602, Japan. sekine.hiroshi576@canon.co.jp.
Abstract:
CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pixel pitch. The newly developed 3.4 µm pitch GS CIS solves this problem by using multiple accumulation shutter technology and the gentle slope light guide structure. As a result, the developed GS pixel achieves 1.8 e- temporal noise and 16,200 e- full well capacity with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e-/lx·s and -89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity are improved by the gentle slope light guide structure.

