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Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor
Xiang Xiao1, Letao Zhang1, Yang Shao1
1School of Electronics and Computer Engineering, Shenzhen Graduate School , Peking University , Shenzhen 518055 , China.
ACS Applied Materials & Interfaces
|December 14, 2017
Summary
Flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology utilizes anodic oxidation for gate dielectric and passivation layers. This room-temperature process yields highly reliable and mechanically robust flexible a-IGZO TFTs on plastic substrates.
Area of Science:
- Materials Science
- Electronics Engineering
- Nanotechnology
Background:
- Flexible electronics require robust thin film transistor (TFT) technologies.
- Amorphous indium-gallium-zinc oxide (a-IGZO) is a promising material for TFTs.
- Anodic oxidation offers a potential method for fabricating TFT components.
Purpose of the Study:
- To develop a room-temperature flexible a-IGZO TFT technology using anodic oxidation for gate dielectric and passivation.
- To investigate the performance and reliability of these flexible TFTs.
- To compare the effectiveness of anodized aluminum oxide passivation with traditional methods.
Main Methods:
- Fabrication of flexible a-IGZO TFTs on plastic substrates at room temperature.
- Utilizing conventional anodization for the Al2O3 gate dielectric on an Al:Nd gate electrode.
- Employing localized anodization to form the Al2O3 channel passivation layer.
- Characterizing electrical performance, gate-bias stability, and mechanical reliability (bending and fatigue tests).
Main Results:
- The anodized Al2O3 passivation layer demonstrated superior performance compared to PECVD SiO2.
- Achieved a field-effect mobility of 7.5 cm²/V·s, subthreshold swing of 0.44 V/dec, and an on-off ratio of 3.1 × 10^8.
- Exhibited acceptable gate-bias stability and good mechanical reliability, maintaining performance up to 0.76% strain and after 1200 fatigue cycles.
Conclusions:
- Room-temperature fabrication of flexible a-IGZO TFTs is feasible using anodic oxidation for critical layers.
- The developed TFTs show excellent electrical properties and mechanical robustness suitable for flexible electronic applications.
- Anodic oxidation is a viable and effective technique for creating high-performance passivation layers in flexible TFTs.
