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High-reflection Mo/Be/Si multilayers for EUV lithography.

Nikolai I Chkhalo, Sergei A Gusev, Andrey N Nechay

    Optics Letters
    |December 15, 2017
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    The study investigated beryllium (Be) layers in molybdenum/beryllium/silicon multilayer mirrors for extreme ultraviolet (EUV) applications. Optimizing Be thickness can enhance mirror reflectivity for improved EUV lithography performance.

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    Area of Science:

    • Materials Science
    • Optics
    • Nanotechnology

    Background:

    • Multilayer mirrors are crucial for applications in the extreme ultraviolet (EUV) spectrum.
    • Molybdenum/silicon (Mo/Si) multilayers are commonly used but can be improved for higher reflectivity.
    • The incorporation of beryllium (Be) layers offers potential enhancements.

    Purpose of the Study:

    • To investigate the effect of Be layers on the reflective properties of Mo/Be/Si multilayer mirrors.
    • To determine the optimal thickness of Be layers for maximizing reflectivity in the EUV region.
    • To assess the potential of these mirrors for EUV lithography.

    Main Methods:

    • Fabrication and characterization of Mo/Be/Si multilayer mirrors.
    • Measurement of reflection coefficients using laboratory and synchrotron-based reflectometry.
    • Analysis of material structure using high-resolution transmission electron microscopy (HRTEM).

    Main Results:

    • Mo/Be/Si multilayer mirrors achieved reflection coefficients exceeding 71% at 13.5 nm and 72% at 12.9 nm.
    • Near-normal incidence mode was employed for reflectivity measurements.
    • Theoretical calculations indicated a potential reflectivity increase of 0.5-1% through Be layer thickness optimization.

    Conclusions:

    • Beryllium layers significantly influence the reflectivity of Mo/Si multilayer mirrors in the EUV region.
    • Optimizing Be layer thickness is a viable strategy for enhancing mirror performance.
    • These findings hold considerable interest for advancing EUV lithography technology.