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High-performance Ge-on-Si photodetector with optimized DBR location.

Jishi Cui, Zhiping Zhou

    Optics Letters
    |December 15, 2017
    PubMed
    Summary

    Optimizing the distributed Bragg reflector (DBR) location in germanium-on-silicon photodetectors enhances performance. Shorter devices with improved bandwidth and reduced dark current were achieved through strategic DBR placement.

    Area of Science:

    • Optoelectronics
    • Semiconductor device physics
    • Photonics

    Background:

    • Germanium-on-silicon (Ge-on-Si) photodetectors are crucial for optical communications.
    • Device performance is often limited by factors such as bandwidth and dark current.
    • The placement of optical elements like distributed Bragg reflectors (DBRs) significantly impacts device characteristics.

    Purpose of the Study:

    • To enhance the performance of Ge-on-Si photodetectors.
    • To investigate the effect of detector length and DBR location on photodetector metrics.
    • To achieve higher bandwidth, lower dark current, and consistent responsivity.

    Main Methods:

    • Fabrication of Ge-on-Si photodetectors with varying lengths.
    • Optimization of the distributed Bragg reflector (DBR) position on the silicon layer.

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  • Characterization of photodetector performance, including responsivity, bandwidth, and dark current.

    • Main Results:

    • An optimized DBR location led to shorter photodetector devices (5 μm length).
    • The optimized device exhibited a responsivity of 0.72 A/W.
    • A 3 dB bandwidth exceeding 31.7 GHz and a low dark current of 7 nA at 1550 nm were achieved.

    Conclusions:

    • Strategic DBR placement is key to optimizing Ge-on-Si photodetector performance.
    • Shorter device lengths with optimized DBRs enable higher bandwidth and reduced dark current.
    • This work provides a pathway for developing more efficient and reliable optoelectronic devices.