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Carrier Generation and Recombination

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
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Related Experiment Video

Updated: Feb 16, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot.

Ł Dusanowski, P Holewa, A Maryński

|December 17, 2017

Summary

This summary is machine-generated.

We demonstrate triggered single-photon emission from Indium Gallium Arsenide/Gallium Arsenide quantum dots (QDs) in the telecom O-band. This breakthrough enables high-purity single photon generation for advanced optical applications.

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Published on: June 8, 2018

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Last Updated: Feb 16, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Generation and Coherent Control of Pulsed Quantum Frequency Combs

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Published on: June 8, 2018

Area of Science:

Quantum optics
Semiconductor physics
Materials science

Background:

Quantum dots (QDs) are crucial for single-photon sources.
Telecom O-band emission is vital for optical communications.
Achieving triggered, high-purity single-photon emission remains a challenge.

Purpose of the Study:

To experimentally demonstrate triggered single-photon emission at the telecom O-band.
To utilize Indium Gallium Arsenide/Gallium Arsenide quantum dots (QDs) for this purpose.
To achieve high purity in the generated single photons.

Main Methods:

Metal-organic vapor-phase epitaxy (MOVPE) for QD growth.
Micro-photoluminescence excitation spectroscopy to identify excitonic states.
Pulsed p-shell resonant excitation for triggered emission.

Main Results:

Successful triggered single-photon emission demonstrated from In(Ga)As/GaAs QDs.
Telecom O-band emission achieved.
High purity evidenced by a low second-order correlation function (g(2)(0) = 0.03, ~0.005 after background correction).

Conclusions:

The study successfully established a high-purity triggered single-photon source.
The developed method is effective for O-band emission using GaAs-based QDs.
This work paves the way for advanced quantum communication and computing applications.