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Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide

Jinshi Zhao1, Ming Zhang1, Shangfei Wan1

  • 1School of Electrical & Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology , Tianjin 300384, China.

ACS Applied Materials & Interfaces
|December 20, 2017
PubMed

Keywords:
electron trapping/detrappingelectronic resistive switchinghigh performancehighly flexible memorymechanical endurancetitanium dioxide

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