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Photogating in Low Dimensional Photodetectors
Hehai Fang1,2, Weida Hu1,2
1State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|December 23, 2017
Summary
Photogating in low-dimensional materials offers high gain in photodetectors. A new general photogating concept may achieve both high gain and high bandwidth, advancing optoelectronic device performance.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Low-dimensional materials like quantum dots and nanowires are crucial for modern electronic and optoelectronic devices.
- Photogating is a key phenomenon in these materials, influencing device performance significantly.
Purpose of the Study:
- To review the role and mechanisms of photogating in low-dimensional photodetectors.
- To differentiate photogating from the conventional photoconductive effect.
- To explore recent advancements and future potential of photogating.
Main Methods:
- Literature review focusing on photogating mechanisms in low-dimensional photodetectors.
- Analysis of trap- and hybrid-induced photogating phenomena.
- Discussion of recent research on general photogating.
Main Results:
- Photogating modulates conductance via photoinduced voltage, distinct from trap-state effects.
- Trap- and hybrid-induced photogating mechanisms, origins, and characteristics are detailed.
- A trade-off between gain and bandwidth is observed in current photogating approaches.
Conclusions:
- General photogating presents a promising avenue for achieving simultaneous high gain and high bandwidth.
- This advancement could lead to the development of novel, high-performance photodetectors.
