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Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin

Cheng-Jung Lee1, Yu-Chi Chang2, Li-Wen Wang3

  • 1Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan. s.w.l.f.dd@gmail.com.

Materials (Basel, Switzerland)
|December 27, 2017
PubMed

Keywords:
cobaltfilamentgelatinresistive memory

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