Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different

Kai-Huang Chen1, Tsung-Ming Tsai2, Chien-Min Cheng3

  • 1Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 829, Taiwan. d9131802@gmail.com.

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