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Instability of Insulators near Quantum Phase Transitions
A Doron1, I Tamir1, T Levinson1
1Department of Condensed Matter Physics, The Weizmann Institute of Science, Rehovot 76100, Israel.
Physical Review Letters
|December 30, 2017
Summary
Amorphous indium oxide films exhibit a magnetic field-driven quantum phase transition. Approaching this transition destabilizes the insulating phase, making it immeasurable due to vanishing voltage discontinuities.
Area of Science:
- Condensed Matter Physics
- Quantum Materials Science
Background:
- Amorphous indium oxide thin films exhibit a magnetic field-driven superconducting to insulator quantum phase transition.
- In the insulating phase, current-voltage characteristics show large current discontinuities attributed to electron overheating.
Purpose of the Study:
- Investigate the behavior of current discontinuities near the quantum critical point.
- Determine the impact of approaching the quantum critical point on the insulating phase's stability.
Main Methods:
- Studied thin films of amorphous indium oxide.
- Applied magnetic fields to induce a quantum phase transition.
- Analyzed current-voltage characteristics in the insulating phase.
Main Results:
- The onset voltage for current discontinuities vanishes as the quantum critical point is approached.
- The insulating phase becomes unstable with respect to any applied voltage.
- Observed discontinuous departure from equilibrium, differing from previous reports.
Conclusions:
- The observed instability is likely a general phenomenon in systems near quantum critical points.
- This instability is crucial for accurately characterizing critical behavior.
- The experimental immeasurability of the insulating phase near the transition is highlighted.
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