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Tin-vacancy (Sn-V) color centers in diamond exhibit unique optical properties. These quantum emitters show potential for advanced quantum technologies due to their distinct spectral features and large ground state splitting.

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Area of Science:

  • Quantum Optics
  • Materials Science
  • Solid State Physics

Background:

  • Color centers in diamond are promising for quantum applications.
  • Group-IV color centers like silicon-vacancy (Si-V) and germanium-vacancy (Ge-V) have been extensively studied.
  • Exploring novel color centers is crucial for advancing quantum technologies.

Purpose of the Study:

  • To create and characterize tin-vacancy (Sn-V) color centers in diamond.
  • To investigate the optical properties and theoretical behavior of Sn-V centers.
  • To compare Sn-V centers with other group-IV color centers for quantum applications.

Main Methods:

  • Ion implantation of tin into diamond followed by high-temperature annealing at 2100°C and 7.7 GPa.
  • First-principles calculations to determine the atomic structure and electronic properties.
  • Optical spectroscopy at room and cryogenic temperatures to analyze spectral features.
  • Hanbury Brown-Twiss interferometry to measure excited state lifetime.

Main Results:

  • Successful creation of Sn-V color centers in diamond with a split-vacancy configuration.
  • Observation of a sharp zero-phonon line at 619 nm at room temperature.
  • Significant ground state splitting (∼850 GHz) at cryogenic temperatures, exceeding that of Si-V and Ge-V centers.
  • Experimentally determined excited state lifetime of approximately 5 ns.
  • Optical transition energies consistent with theoretical predictions.

Conclusions:

  • Sn-V color centers possess distinct optical properties suitable for quantum information processing.
  • The large ground state splitting of Sn-V centers offers advantages for qubit manipulation.
  • Experimental results align well with theoretical calculations, validating the proposed structure and properties.