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Updated: Feb 16, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Attainment of 40.5 pm spatial resolution using 300 kV scanning transmission electron microscope equipped with
Shigeyuki Morishita1, Ryo Ishikawa2, Yuji Kohno1
1JEOL Ltd, 3-1-2 Musashino, Akishima, Tokyo196-8558, Japan.
Abstract:
The achievement of a fine electron probe for high-resolution imaging in scanning transmission electron microscopy requires technological developments, especially in electron optics. For this purpose, we developed a microscope with a fifth-order aberration corrector that operates at 300 kV. The contrast flat region in an experimental Ronchigram, which indicates the aberration-free angle, was expanded to 70 mrad. By using a probe with convergence angle of 40 mrad in the scanning transmission electron microscope at 300 kV, we attained the spatial resolution of 40.5 pm, which is the projected interatomic distance between Ga-Ga atomic columns of GaN observed along [212] direction.
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