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Nociception

Nociception

Nociception—the ability to feel pain—is essential for an organism’s survival and overall well-being. Noxious stimuli such as piercing pain from a sharp object, heat from an open flame, or contact with corrosive chemicals are first detected by sensory receptors, called nociceptors, located on nerve endings. Nociceptors express ion channels that convert noxious stimuli into electrical signals. When these signals reach the brain via sensory neurons, they are perceived as pain.

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Related Experiment Video

Updated: Feb 15, 2026

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Nociceptive Memristor.

Yumin Kim¹, Young Jae Kwon¹, Dae Eun Kwon¹

¹Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151-744, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)

|January 11, 2018

Summary

This summary is machine-generated.

Researchers developed a novel electronic receptor using a Pt/HfO2/TiN memristor that mimics nociceptor (pain-sensing nerve) behaviors. This breakthrough advances neuromorphic computing and artificial nerve systems by enabling electronic stimuli detection and response.

Keywords:

charge trapping memristors nociceptors relaxation thresholds

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Area of Science:

Materials Science
Neuroscience
Electronic Engineering

Background:

Memristors exhibit biomimetic properties, enabling their use as electronic synapses and neurons for neuromorphic computing.
Extending memristor applications to artificial nerves requires electronic receptors capable of converting external stimuli into internal nerve system signals.

Purpose of the Study:

To demonstrate nociceptor behaviors using a Pt/HfO2/TiN memristor as an electronic receptor.
To investigate the underlying mechanisms responsible for the observed nociceptive behaviors.
To evaluate the material design's impact on electronic nociceptor functionality.

Main Methods:

Fabrication of a Pt/HfO2/TiN memristor device.
Characterization of the memristor's response to varying external stimuli (strength, duration, repetition rate).
Analysis of electron trapping/detrapping dynamics and built-in potential effects.
Comparative material evaluation with Pt/Ti/HfO2/TiN devices.

Main Results:

The Pt/HfO2/TiN memristor successfully demonstrated four nociceptive behaviors: threshold, relaxation, allodynia, and hyperalgesia.
These behaviors are attributed to electron trapping/detrapping in the HfO2 layer (trap energy level ≈0.7 eV) and work function mismatch between electrodes.
The device exhibited time-dependent relaxation of trapped electrons, with relaxation times ranging from milliseconds to tens of seconds, mimicking biological signal decay.

Conclusions:

The Pt/HfO2/TiN memristor functions as an effective electronic nociceptor, replicating key pain-sensing nerve behaviors.
Careful material design and fabrication are crucial for achieving desired functionalities in electronic nociceptors.
This work paves the way for advanced artificial nerve systems and neuromorphic computing applications.