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Updated: Feb 15, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Anomalous Hall-like effect probe of antiferromagnetic domain wall
Lili Lang1, Xuepeng Qiu2, Shiming Zhou3
1Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
Abstract:
Of crucial importance to antiferromagnetic (AF) spintronic devices, AF domain wall (AFDW), created in exchange biased Y3Fe5O12/Ni0.50Co0.50O (NiCoO)/Pt, is characterized by anomalous Hall-like effect through magnetic proximity effect and spin Hall magnetoresistance at NiCoO/Pt interface. The AFDW thickness, in the order of nanometers, has been for the first time proved in experiments to increase with increasing temperature. AF spins within AFDW show the same chirality in decent and ascent branches of ferromagnetic magnetization reversal process. Moreover, the uncompensated magnetic moment at the NiCoO/Pt interface is of perpendicular magnetization anisotropy and changes linearly in magnitude with temperature due to the reduced coordination of the magnetic atoms on the AF surface. This work will help to clarify the mechanism of the spin current propagation in AF materials and fully understand the physics behind exchange bias.
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