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Detection of Nitric Oxide and Superoxide Radical Anion by Electron Paramagnetic Resonance Spectroscopy from Cells using Spin Traps

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Intrinsic electron trapping in amorphous oxide.

Jack Strand¹, Moloud Kaviani, Valeri V Afanas'ev

¹Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom.

|January 16, 2018

Summary

This summary is machine-generated.

Electron trapping in amorphous hafnium oxide (a-HfO2) occurs at intrinsic sites formed by under-coordinated Hf cations and elongated Hf-O bonds, not broken bonds. This finding offers a new understanding of charge trapping in non-glass-forming amorphous insulators.

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Area of Science:

Materials Science
Solid State Physics
Nanotechnology

Background:

Amorphous oxide films are crucial in modern electronics.
Understanding charge trapping mechanisms is vital for device performance and reliability.
Non-glass-forming amorphous oxides present unique defect structures compared to traditional glass-forming materials.

Purpose of the Study:

To investigate the nature and energy distribution of intrinsic electron trapping sites in amorphous hafnium oxide (a-HfO2).
To elucidate the atomic origins of these trapping sites.
To compare trapping mechanisms in non-glass-forming oxides with those in glass-forming oxides.

Main Methods:

Photo-depopulation spectroscopy to determine energy distributions of trapped electrons.
Density functional theory (DFT) calculations to model amorphous hafnium oxide structures and defect sites.
Comparison of experimental data with theoretical calculations.

Main Results:

Identified intrinsic electron trapping states in a-HfO2 within 2-3 eV below the conduction band.
Attributed these states to under-coordinated Hf cations and elongated Hf-O bonds.
Demonstrated that these sites can trap up to two electrons, forming polarons and bi-polarons, without bond breaking.

Conclusions:

Intrinsic charge trapping in a-HfO2 is governed by under-coordinated cations and bond distortions, distinct from dangling bonds in SiO2.
A novel mechanism of intrinsic charge trapping in non-glass-forming amorphous insulators is proposed.
Hydrogen incorporation can further deepen electron trap energies.