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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Saturable Absorption in 2D Ti3 C2 MXene Thin Films for Passive Photonic Diodes
Yongchang Dong1, Sergii Chertopalov2, Kathleen Maleski3
1Department of Physics and Astronomy and Clemson Nanomaterials Institute, Clemson University, Clemson, SC, 29634, USA.
Abstract:
MXenes comprise a new class of 2D transition metal carbides, nitrides, and carbonitrides that exhibit unique light-matter interactions. Recently, 2D Ti3 CNTx (Tx represents functional groups such as OH and F) was found to exhibit nonlinear saturable absorption (SA) or increased transmittance at higher light fluences, which is useful for mode locking in fiber-based femtosecond lasers. However, the fundamental origin and thickness dependence of SA behavior in MXenes remain to be understood. 2D Ti3 C2 Tx thin films of different thicknesses are fabricated using an interfacial film formation technique to systematically study their nonlinear optical properties. Using the open aperture Z-scan method, it is found that the SA behavior in Ti3 C2 Tx MXene arises from plasmon-induced increase in the ground state absorption at photon energies above the threshold for free carrier oscillations. The saturation fluence and modulation depth of Ti3 C2 Tx MXene is observed to be dependent on the film thickness. Unlike other 2D materials, Ti3 C2 Tx is found to show higher threshold for light-induced damage with up to 50% increase in nonlinear transmittance. Lastly, building on the SA behavior of Ti3 C2 Tx MXenes, a Ti3 C2 Tx MXene-based photonic diode that breaks time-reversal symmetry to achieve nonreciprocal transmission of nanosecond laser pulses is demonstrated.
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