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Updated: Feb 15, 2026

A Technique to Functionalize and Self-assemble Macroscopic Nanoparticle-ligand Monolayer Films onto Template-free Substrates
Published on: May 9, 2014
How Ligands Affect Resistive Switching in Solution-Processed HfO2 Nanoparticle Assemblies
Jiaying Wang1, Satyan Choudhary2, Jonathan De Roo3
1Department of Mechanical and Industrial Engineering, University of Massachusetts Amherst , 160 Governors Drive, 219 Engineering Laboratory I, Amherst, Massachusetts 01003, United States.
Abstract:
Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance. Although thin-film oxide materials have been extensively studied, the switching properties of nanoparticle assemblies remain underexplored due to difficulties in fabricating ordered structures. Here, we employ a simple flow coating method for the facile deposition of highly ordered HfO2 nanoparticle nanoribbon assemblies. The resistive switching character of nanoribbons was determined to correlate directly with the organic capping layer length of their constituting HfO2 nanoparticles, using oleic acid, dodecanoic acid, and undecenoic acid as model nanoparticle ligands. Through a systematic comparison of the forming process, operating set/reset voltages, and resistance states, we demonstrate a tunable resistive switching response by varying the ligand type, thus providing a base correlation for solution-processed ReRAM device fabrication.
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