Surface State Dynamics Dictating Transport in InAs Nanowires

David Lynall1,2, Selvakumar V Nair1,2, David Gutstein1,3

  • 1Centre for Advanced Nanotechnology, University of Toronto , 170 College Street, Toronto, Ontario M5S 3E3, Canada.

Nano Letters
|January 19, 2018
PubMed
Summary

Surface traps significantly impact InAs nanowire transistors, causing hysteresis and mobility changes. Controlling these slow traps via gate voltage and cooling is crucial for stable nanoelectronic device performance.

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