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Area of Science:

  • * Image sensor technology
  • * Semiconductor device physics

Background:

  • * Growing demand for automotive image sensors with high dynamic range (HDR) and flicker immunity.
  • * Limitations of existing HDR pixel architectures in addressing these challenges.

Purpose of the Study:

  • * To model and validate a native HDR pixel concept utilizing parallel electron and hole collection.
  • * To demonstrate the feasibility of this concept through fabrication and testing.
  • * To compare its performance against alternative HDR pixel designs.

Main Methods:

  • * Theoretical modeling of the native HDR pixel performance.
  • * Fabrication of a 3.2 μm pixel using a back-side illuminated (BSI) process with capacitive deep trench isolation (CDTI).
  • * Evaluation of electron and hole collection pathways and storage capabilities.

Main Results:

  • * Demonstrated state-of-the-art low-light performance for the electron-based image using a standard 4T pinned diode architecture.
  • * Achieved a 750 kH+ linear storage capability for the hole-based image via a 73 fF CDTI capacitor.
  • * Verified flicker and motion artifact immunity due to simultaneous image capture within a single integration window.

Conclusions:

  • * The native HDR pixel concept effectively addresses the need for high dynamic range and flicker immunity in image sensors.
  • * The fabricated BSI pixel demonstrates excellent performance for both low-light and high-signal level imaging.
  • * This technology offers a robust solution for demanding applications like automotive imaging.