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Updated: Feb 15, 2026

Low-energy Cathodoluminescence for OxyNitride Phosphors
Published on: November 15, 2016
Large Excitonic Reflectivity of Monolayer MoSe_{2} Encapsulated in Hexagonal Boron Nitride
Giovanni Scuri1, You Zhou1,2, Alexander A High1,2
1Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
Abstract:
We demonstrate that a single layer of MoSe_{2} encapsulated by hexagonal boron nitride can act as an electrically switchable mirror at cryogenic temperatures, reflecting up to 85% of incident light at the excitonic resonance. This high reflectance is a direct consequence of the excellent coherence properties of excitons in this atomically thin semiconductor. We show that the MoSe_{2} monolayer exhibits power-and wavelength-dependent nonlinearities that stem from exciton-based lattice heating in the case of continuous-wave excitation and exciton-exciton interactions when fast, pulsed laser excitation is used.
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