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Interface Engineering via Photopolymerization-Induced Phase Separation for Flexible UV-Responsive Phototransistors.

Haiyan Peng1, Yan Yan2, Yingkui Yang3

  • 1Key Laboratory for Material Chemistry of Energy Conversion and Storage, Ministry of Education, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology , Wuhan 430074, China.

ACS Applied Materials & Interfaces
|February 8, 2018
PubMed
Summary

We developed a new method using in situ thiol-ene click photopolymerization to create superior semiconductor heterojunction interfaces. This technique enhances charge separation and transport, leading to high-performance UV phototransistors.

Keywords:
UV sensorclick chemistryinterface engineeringphotodetectorphotopolymerizationphototransistorsemiconductorthiol−ene

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Photochemistry

Background:

  • Interface engineering is crucial for optoelectronic device performance, enabling efficient charge separation and transport.
  • Current methods for precise interface control are challenging and limited.
  • Developing novel strategies for controlled heterojunction formation is essential for advancing optoelectronics.

Purpose of the Study:

  • To introduce a facile and versatile protocol for constructing heterojunction semiconductor interfaces.
  • To demonstrate the effectiveness of in situ thiol-ene click photopolymerization-induced phase separation for interface engineering.
  • To achieve enhanced device performance in optoelectronic applications, specifically UV-responsive phototransistors.

Main Methods:

  • Implementation of in situ thiol-ene click photopolymerization-induced phase separation.
  • Fabrication of continuous mountainlike heterojunction interfaces.
  • Utilizing a low-temperature photopolymerization paradigm adaptable to rigid and flexible substrates.
  • Conducting control experiments with ex situ photopolymerization and in situ thermal polymerization.

Main Results:

  • The developed protocol successfully generated continuous mountainlike heterojunction interfaces.
  • These interfaces promote efficient exciton dissociation and facilitate hole transport.
  • High-performance UV-responsive phototransistors were fabricated with a normalized detectivity up to 6.3 × 1014 cm Hz1/2 W-1.
  • The in situ photopolymerization method demonstrated superiority over ex situ and thermal polymerization techniques.

Conclusions:

  • In situ thiol-ene click photopolymerization-induced phase separation offers a facile and effective approach for creating advanced heterojunction interfaces.
  • This method significantly enhances charge dynamics and device performance in optoelectronics.
  • The low-temperature, adaptable paradigm holds promise for developing next-generation flexible and high-performance UV photodetectors.