Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Lumber Defects01:23

Lumber Defects

563
Lumber defects, which can affect both the appearance and structural integrity of wood, include a variety of growth and manufacturing flaws. Growth defects such as knots and knotholes occur where branches were once attached to the tree trunk, with knotholes forming when these knots fall out. Other natural defects include decay and insect damage, which compromise the wood's strength and durability.
Shakes are minor fractures that run along or across the wood's annual rings, while wane is...
563
Thermal Strain01:19

Thermal Strain

2.9K
Thermal strain is a concept that arises when we consider how temperature changes affect structures. Unlike the conventional assumption that structures remain constant under load, real-world scenarios often involve temperature fluctuations that can significantly impact these structures. Consider a homogeneous rod with a uniform cross-section resting freely on a flat horizontal surface. If the rod's temperature increases, the rod elongates. This elongation is proportional to the temperature...
2.9K
Shearing Strain01:20

Shearing Strain

1.5K
The shearing strain represents a cubic element's angular change when subjected to shearing stress. This type of stress can transform a cube into an oblique parallelepiped without influencing normal strains. The cubic element experiences a significant transformation when exposed solely to shearing stress. Its shape alters from a perfect cube into a rhomboid, clearly demonstrating the effect of shearing strain. The degree of this strain is considered positive if it reduces the angle between the...
1.5K
Measurements of Strain01:27

Measurements of Strain

2.6K
Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain...
2.6K
Strain Energy01:13

Strain Energy

1.0K
Strain energy is a fundamental concept in the field of materials science and structural engineering, describing the energy absorbed by a material or structure when it is deformed under load.
Consider a rod that is fixed at one end and subjected to an axial force at the free end. This axial force induces stress within the rod, leading to its elongation. As the axial force increases, so does the elongation of the rod, illustrating a direct relationship between the force applied and the resulting...
1.0K
Persuasion Strategies01:52

Persuasion Strategies

43.6K
Researchers have tested many persuasion strategies, including the foot-in-the door and the door-in-the-face techniques, in a variety of contexts. Ultimately, the principles are effective in selling products and changing people’s attitude, ideas, and behaviors (Cialdini & Goldstein, 2004).
43.6K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Multi-Stimuli Responsive Magneto-Coacervate Droplets for Selective Molecular Enrichment and Programmable Manipulation.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Structural and electrical properties of solid-source MBE-grown graphene/Ge(001) heterostructures.

Nanoscale·2026
Same author

High-κ KBe<sub>2</sub>BO<sub>3</sub>F<sub>2</sub> dielectric material with wide bandgap for two-dimensional electronics.

Nature communications·2026
Same author

Oriented ion migration in dielectric Sb<sub>4</sub>O<sub>5</sub>Cl<sub>2</sub> single crystals for multifunctional two-dimensional electronics.

Nature communications·2026
Same author

van der Waals grain boundaries with inert electrical behaviors in inorganic molecular dielectric film.

Nature communications·2026
Same author

A universal all-dry microfabrication method for sensitive electronic materials via an inorganic molecular lithographic mediator.

Nature communications·2026

Related Experiment Video

Updated: Feb 14, 2026

A Strategy for the Study of IL-9-Producing Lymphoid Cells in the Nippostrongylus brasiliensis Infection Model
08:38

A Strategy for the Study of IL-9-Producing Lymphoid Cells in the Nippostrongylus brasiliensis Infection Model

Published on: March 3, 2023

1.8K

New strategies for producing defect free SiGe strained nanolayers.

Thomas David1, Jean-Noël Aqua2, Kailang Liu1,2

  • 1CNRS, Aix Marseille University, UMR 7334, Inst Mat Microelect Nanosci Prov, F-13397, Marseille, France.

Scientific Reports
|February 15, 2018
PubMed
Summary

Strain engineering improves electronic devices but faces growth instability. Pre-straining substrates effectively inhibits this instability and dislocation nucleation in SiGe heteroepitaxy.

More Related Videos

Author Spotlight: Understanding Rhamnolipid Regulation in Pseudomonas aeruginosa
04:37

Author Spotlight: Understanding Rhamnolipid Regulation in Pseudomonas aeruginosa

Published on: March 29, 2024

2.2K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K

Related Experiment Videos

Last Updated: Feb 14, 2026

A Strategy for the Study of IL-9-Producing Lymphoid Cells in the Nippostrongylus brasiliensis Infection Model
08:38

A Strategy for the Study of IL-9-Producing Lymphoid Cells in the Nippostrongylus brasiliensis Infection Model

Published on: March 3, 2023

1.8K
Author Spotlight: Understanding Rhamnolipid Regulation in Pseudomonas aeruginosa
04:37

Author Spotlight: Understanding Rhamnolipid Regulation in Pseudomonas aeruginosa

Published on: March 29, 2024

2.2K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Strain engineering is crucial for enhancing electronic device properties.
  • Asarro Tiller Grinfeld instability and dislocation nucleation limit strain engineering.
  • Existing methods include stretchable nanomembranes and lateral stressors.

Purpose of the Study:

  • Investigate the impact of substrate softness and pre-strain on growth instability and dislocation nucleation.
  • Evaluate the effectiveness of compliant and pre-strained substrates in SiGe heteroepitaxy.

Main Methods:

  • Theoretical modeling of substrate effects on growth instability.
  • Experimental validation using Silicon On Insulator (SOI) and porous silicon substrates.
  • Heteroepitaxy of Silicon-Germanium (SiGe) on various substrates.

Main Results:

  • Soft substrates enhance instability growth rate in specific conditions but not for SiGe due to normalized layer thickness.
  • Tensile pre-strained substrates significantly inhibit both growth instability and misfit dislocation nucleation.
  • Observed inhibition during SiGe heteroepitaxy on pre-strained porous silicon.

Conclusions:

  • Substrate softness has limited impact on SiGe heteroepitaxy instability under tested conditions.
  • Tensile pre-straining is a highly effective strategy to suppress detrimental growth instabilities and dislocations.
  • Findings offer insights for advanced strain engineering in semiconductor device fabrication.