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Photodetector Based on Multilayer SnSe₂ Field Effect Transistor
Moonshik Kang1, Servin Rathi1, Inyeal Lee1
1College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.
Journal of Nanoscience and Nanotechnology
|February 15, 2018
Summary
We developed a high-performance photodetector using multilayer tin diselenide (SnSe2). This device shows excellent photoresponsivity and detectivity, making it promising for optoelectronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Optoelectronics
Background:
- Photodetectors are crucial components in various optoelectronic systems.
- Developing materials with enhanced photoresponse is an active area of research.
- Tin diselenide (SnSe2) is a layered semiconductor with potential for electronic applications.
Purpose of the Study:
- To fabricate and characterize a high-performance photodetector using multilayer tin diselenide (SnSe2).
- To evaluate the optoelectronic properties of SnSe2 for potential use in advanced devices.
Main Methods:
- Synthesized high-quality tin diselenide (SnSe2) crystals using the temperature gradient growth method.
- Exfoliated multilayer SnSe2 for photodetector fabrication.
- Measured photoresponsivity, specific detectivity, and time-resolved photoresponse under laser irradiation (λ = 450 nm).
Main Results:
- Achieved high photoresponsivity of 5.11 × 10^5 A/W.
- Demonstrated high specific detectivity of 2.79 × 10^13 Jones.
- Observed reproducible and stable time-resolved photoresponse.
Conclusions:
- Multilayer SnSe2 is a promising material for high-performance photodetector applications.
- The fabricated SnSe2 photodetector exhibits excellent optoelectronic characteristics.
- Further research into SnSe2-based devices could lead to advancements in optoelectronics.
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